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| Finite element analysis of surface through-thickness crack in piezoelectric thin film |
| Received:June 17, 2008 |
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| DOI：10.7511/jslx20104020 |
| KeyWord:piezoelectric thin film finite element method thermopiezoelectric response domain switching intensity factor |
| Author | Institution |
| 吴波 |
湘潭大学 材料与光电物理学院,湘潭 |
| 郑学军 |
湘潭大学 材料与光电物理学院,湘潭 ;湘潭大学 低维材料及其应用技术教育部重点实验室,湘潭 |
| 李东海 |
湘潭大学 材料与光电物理学院,湘潭 |
| 周益春 |
湘潭大学 材料与光电物理学院,湘潭 ;湘潭大学 低维材料及其应用技术教育部重点实验室,湘潭 |
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| Abstract: |
| The surface through-thickness crack in piezoelectric thin film was analyzed based on numerical simulation via ANSYS software, and the switching toughening due to 90° domain switching was studied under the laser irradiation. Firstly, the thermopiezoelectric response in uncracked thin film was solved under the laser irradiation. Then by using the equal and opposite of the above stress and electric displacement fields as the crack surface loading, the applied stress and electric displacement intensity factors at the crack tip were obtained. Lastly, the shielding stress intensity factor due to 90° domain switching was calculated based on the small scale domain switching theory. The variations of applied stress intensity factor, electric displacement intensity factor and shielding stress intensity factor with irradiation time and crack location were discussed. It could be used to predict the crack propagation and fracture behavior for the piezoelectric thin film system operating at heating environment. |
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